| PART |
Description |
Maker |
| KVR13LE9S8-4 |
4GB 1Rx8 512M x 72-Bit PC3L-10600
|
List of Unclassifed Man...
|
| KVR16LE11L-4 |
4GB 1Rx8 512M x 72-Bit PC3L-12800
|
List of Unclassifed Man...
|
| HX316C10FW-4 |
4GB 512M x 64-Bit DDR3-1600
|
List of Unclassifed Man...
|
| HX313C9FB-4 |
4GB 512M x 64-Bit DDR3-1333
|
List of Unclassifed Man...
|
| EBE41RE4AAHA-5C-E EBE41RE4AAHA EBE41RE4AAHA-4A-E |
4GB Registered DDR2 SDRAM DIMM (512M words x 72 bits, 2 Ranks)
|
ELPIDA[Elpida Memory]
|
| KVR16LE11-8 |
8GB 2Rx8 1G x 72-Bit PC3L-12800
|
List of Unclassifed Man...
|
| KVR16LR11S4K3-24 |
24GB (8GB 1G x 72-Bit x 3 pcs.) PC3L-12800
|
List of Unclassifed Man...
|
| K9K4G08U1M K9F2G16U0M K9F2G08U0M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM
512M; 100MHz LVTTL interface SDRAM
512M; 133MHz LVTTL interface SDRAM
|
Elpida Memory
|
| MX25UM51245G |
1.8V 512M-BIT [x 1/x 8] CMOS MXSMIO
|
Macronix International
|
